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RB521G-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for rectifying small power application
PINNING PIN 1 2 DESCRIPTION Cathode Anode
2
1
E
Top View Marking Code: "E" Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (60 Hz for 1 cyc.) Junction Temperature Storage Temperature Range
Symbol VR IO IFSM Tj Ts
Value 30 100 1 125 - 40 to + 125
Unit V mA A
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 10 V Symbol VF IR Max. 0.35 10 Unit V A
Note: Please pay attention to static electricity when handling.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 23/11/2006
RB521G-30
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-523
ALL ROUND
A C
HE
D
A
E
bp
UNIT
mm
A
0.70 0.60
bp
0.4 0.3
C
0.135 0.127
D
1.25 1.15
E
0.85 0.75
HE
1.7 1.5
V
0.1
5
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 23/11/2006

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